24 Patents
- US125987872026Field Effect Transistor with Dual Layer Isolation Structure and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124647502025Semiconductor Device and Formation Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124648122025Semiconductor Device Structure Including Forksheet Transistors and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US123763652025Nanosheet Devices with Hybrid Structures and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123242292025Semiconductor Device Structure Including Forksheet Transistors and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123007192025Structure and Formation Method of Semiconductor Device with Isolation Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123007232025Transistor Including Downward Extending Silicide
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123026302025Integrated Circuit with Backside Trench for Metal Gate Definition
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122496212025Semiconductor Structure with Dielectric Fin Feature
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121837992024Semiconductor Device with Gate Isolation Features and Fabrication Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US121258772024Nanostructure Field-effect Transistor Device with Dielectric Layer for Reducing Substrate Leakage or Well Isolation Leakage and Methods of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121070872024Semiconductor Device with Gate Isolation Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US120949502024Nanostructures and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US120092612024Nanosheet Devices with Hybrid Structures and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US118761192024Semiconductor Device with Gate Isolation Features and Fabrication Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118550782023Semiconductor Device Structure Including Forksheet Transistors and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118550792023Integrated Circuit with Backside Trench for Metal Gate Definition
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- 0 cites
- US116705502023Nanostructure Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites