Jung-chi Tai

8 Patents

• US124713112025

  Semiconductor Fin-like Field-effect Transistor (finfet) Device Including Source/drain Structure with Boron Doped Capping Layer

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US120947612024

  Fets and Methods of Forming Fets

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US120574502024

  Epitaxy Regions with Large Landing Areas for Contact Plugs

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US119489992024

  Semiconductor Device

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US118761752024

  Secondary Battery Structure Having Windable Flexible Polymer Matrix Solid Electrolyte and Manufacturing Method Thereof

  Kang Na Hsiung Enterprise Co., Ltd.

  0 cites
• US118551422023

  Supportive Layer in Source/drains of Finfet Devices

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US117282082023

  FETS and Methods of Forming FETS

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US116521052023

  Epitaxy Regions with Large Landing Areas for Contact Plugs

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites