9 Patents
- 0 cites
- US123493942025Dielectric Isolation Layer Between a Nanowire Transistor and a Substrate
Intel Corporation
0 cites - 0 cites
- US123026322025Non-planar Integrated Circuit Structures Having Mitigated Source or Drain Etch from Replacement Gate Process
Intel Corporation
0 cites - 0 cites
- US119014582024Dielectric Isolation Layer Between a Nanowire Transistor and a Substrate
Intel Corporation
0 cites - US118698912024Non-planar Integrated Circuit Structures Having Mitigated Source or Drain Etch from Replacement Gate Process
Intel Corporation
0 cites - 0 cites
- 0 cites