Patents/Inventors

Julien Frougier

Albany, NYUS142 patents

151 Patents

US126204262026
Deterministic Voltage-controlled Magnetic Anisotropy (VCMA) MRAM with Spin-transfer Torque (STT) MRAM Assistance
International Business Machines Corporation
0 cites
US126221812026
Phase Change Memory
International Business Machines Corporation
0 cites
US126158122026
Stacked Field-effect Transistors
International Business Machines Corporation
0 cites
US126160192026
Via Connection to Backside Power Delivery Network
International Business Machines Corporation
0 cites
US126107532026
Stacked Resistive Random-access Memory Cross-point Cell
International Business Machines Corporation
0 cites
US126106132026
Nanosheet Device with Vertical Blocker Fin
International Business Machines Corporation
0 cites
US126105132026
SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices
International Business Machines Corporation
0 cites
US126045102026
Contact Jumper for Non-self Aligned Contact Devices
International Business Machines Corporation
0 cites
US126046742026
Back Side Phase Change Memory (PCM) with PCM Back Side Source/drain Contact Structure
International Business Machines Corporation
0 cites
US125987762026
Nanosheet Epitaxy with Full Bottom Isolation
International Business Machines Corporation
0 cites
US125987592026
High-density Metal-insulator-metal Capacitor Integration Wth Nanosheet Stack Technology
International Business Machines Corporation
0 cites
US125935012026
Stacked Fork Sheet Devices
International Business Machines Corporation
0 cites
US125934682026
Self-aligned Backside Contact with Increased Contact Area
International Business Machines Corporation
0 cites
US125934572026
Multi-state Ferroelectric-ram with Stacked Capacitors
International Business Machines Corporation
0 cites
US125882732026
Stacked Electronic Devices Having Independent Gates
International Business Machines Corporation
0 cites
US125751572026
Nanosheet with Dual Isolation Regions Separated by Buried Inner Spacer
International Business Machines Corporation
0 cites
US125751402026
Diffusion Break Structure for Transistors
International Business Machines Corporation
0 cites
US125751452026
Monolithic Stacked Field Effect Transistor (SFET) with Dual Middle Dielectric Isolation (MDI) Separation
International Business Machines Corporation
0 cites
US125751602026
Backside and Frontside Contacts for Semiconductor Device
International Business Machines Corporation
0 cites
US125686832026
Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET
International Business Machines Corporation
0 cites
US125639722026
Magnetic Tunnel Junction Pillar Formation for MRAM Device
International Business Machines Corporation
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US125637472026
Three Dimensional Reram Device
International Business Machines Corporation
0 cites
US125637762026
Forming Source/drain Contact in a Tight Tip-to-tip Space
International Business Machines Corporation
0 cites
US125573382026
Semiconductor Structure Having a Backside Contact with Backside Sidewall Spacers
International Business Machines Corporation
0 cites
US125573412026
Negative Capacitance Gate-all-around Transistor with Tunable Capacitance Ratio
International Business Machines Corporation
0 cites
US125573532026
Method and Structure for a Logic Device and Another Device
International Business Machines Corporation
0 cites
US125573562026
Semiconductor Structure with Fully Wrapped-around Backside Contact
International Business Machines Corporation
0 cites
US125573542026
Vertical Field-effect Transistor (FET) Stacked Over Horizontal FET
International Business Machines Corporation
0 cites
US125572952026
Embedded Reram with Backside Contact
International Business Machines Corporation
0 cites
US125503762026
Work Function Metal Patterning and Middle-of-line Self-aligned Contacts for Nanosheet Technology
International Business Machines Corporation
0 cites
US125504272026
Vertical Inverter Formation on Stacked Field Effect Transistor (SFET)
International Business Machines Corporation
0 cites
US125503382026
Three Dimensional Cross-point Non-volatile Memory
International Business Machines Corporation
0 cites
US125074372025
Direct Backside Self-aligned Contact
International Business Machines Corporation
0 cites
US125001832025
Support Dielectric Fin to Prevent Gate Flop-over in Nanosheet Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125016982025
Stacked Transistors Having Self Aligned Backside Contact with Backside Replacement Metal Gate
International Business Machines Corporation
0 cites
US124955872025
Self-aligned Contact (SAC) in Nanosheet Transistors
International Business Machines Corporation
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US124890532025
Interconnect Structure Including Patterned Metal Lines
International Business Machines Corporation
0 cites
US124827422025
Enhanced Linerless Vias
International Business Machines Corporation
0 cites
US124777792025
Gate-all-around Field-effect-transistor with Wrap-around-channel Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124761362025
Liner-less via Contact
International Business Machines Corporation
0 cites
US124648132025
Semiconductor Device Having Hybrid Middle of Line Contacts
International Business Machines Corporation
0 cites
US124532962025
Phase-change Memory Device with Conductive Cladding
International Business Machines Corporation
0 cites
US124531702025
Integration of Nanosheets with Bottom Dielectric Isolation and Ideal Diode
International Business Machines Corporation
0 cites
US124531762025
Heterogeneous Gate All Around Dielectric Thickness
International Business Machines Corporation
0 cites
US124462322025
Mram-based Chip Identification with Free Random Programming
International Business Machines Corporation
0 cites
US124396722025
Semiconductor Backside Contact Structure with Increased Contact Area
International Business Machines Corporation
0 cites
US124329682025
Nanowire Source/drain Formation for Nanosheet Device
International Business Machines Corporation
0 cites
US124263382025
Buried Power Rail with Robust Connection to a Wrap Around Contact
International Business Machines Corporation
0 cites
US124263142025
Strain Generation and Anchoring in Gate-all-around Field Effect Transistors
International Business Machines Corporation
0 cites
US124190802025
Semiconductor Structure with Wrapped-around Backside Contact
International Business Machines Corporation
0 cites
US124143362025
Semiconductor Structure Having Stacked Power Rails
International Business Machines Corporation
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US124128302025
Semiconductor Device with Power Via
International Business Machines Corporation
0 cites
US124128292025
Method and Structure of Forming Sidewall Contact for Stacked FET
0 cites
US124143282025
Co-integrating Gate-all-around Nanosheet Transistors and Comb-nanosheet Transistors
International Business Machines Corporation
0 cites
US124024082025
Stacked FETS Including Devices with Thick Gate Oxide
International Business Machines Corporation
0 cites
US123962272025
Full Wrap Around Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123896092025
Circuit Architecture Using Transistors with Dynamic Dual Functionality for Logic and Embedded Memory Drivers
International Business Machines Corporation
0 cites
US123898132025
Resistive Switching Memory Cell
International Business Machines Corporation
0 cites
US123826622025
Wrap-around-contact for 2d-channel Gate-all-around Field-effect-transistors
International Business Machines Corporation
0 cites
US123826652025
Increased Gate Length at Given Footprint for Nanosheet Device
International Business Machines Corporation
0 cites
US123826822025
Gate-all-around Nanosheet-fet with Variable Channel Geometries for Performance Optimization
International Business Machines Corporation
0 cites
US123620042025
Scaled 2T DRAM
International Business Machines Corporation
0 cites
US123639772025
Forming Dielectric Sidewall and Bottom Dielectric Isolation in Fork-fet Devices
International Business Machines Corporation
0 cites
US123494572025
Stacked Transistors Having Bottom Contact with Replacement Spacer
International Business Machines Corporation
0 cites
US123362942025
Gate-cut and Separation Techniques for Enabling Independent Gate Control of Stacked Transistors
International Business Machines Corporation
0 cites
US123362792025
Fin Stack Including Tensile-strained and Compressively Strained Fin Portions
International Business Machines Corporation
0 cites
US123288592025
Stacked FET SRAM
International Business Machines Corporation
0 cites
US123289162025
Cpp-agnostic Source-drain Contact Formation for Gate-all-around Devices with Dielectric Isolation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123242342025
Fork Sheet Device with Better Electrostatic Control
International Business Machines Corporation
0 cites
US123241972025
Spin-based Gate-all-around Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123242072025
Channel Protection of Gate-all-around Devices for Performance Optimization
International Business Machines Corporation
0 cites
US123175092025
Stacked Spin-orbit-torque Magnetoresistive Random-access Memory
International Business Machines Corporation
0 cites
US123175142025
Resistive Random-access Memory Structures with Stacked Transistors
International Business Machines Corporation
0 cites
US123175552025
Gate-all-around Nanosheet Field Effect Transistor Integrated with Fin Field Effect Transistor
International Business Machines Corporation
0 cites
US123100542025
Late Replacement Bottom Isolation for Nanosheet Devices
International Business Machines Corporation
0 cites
US123100642025
Isolation Pillar Structures for Stacked Device Structures
International Business Machines Corporation
0 cites
US123100612025
Nanosheet Transistor Devices with Different Active Channel Widths
International Business Machines Corporation
0 cites
US123006172025
Self-aligned Buried Power Rail Cap for Semiconductor Devices
International Business Machines Corporation
0 cites
US122782372025
Stacked FETS with Non-shared Work Function Metals
International Business Machines Corporation
0 cites
US122726482025
Semiconductor Device Having a Backside Power Rail
International Business Machines Corporation
0 cites
US122740892025
Stacked FET Sidewall Strap Connections Between Gates
International Business Machines Corporation
0 cites
US122741862025
Low Current Phase-change Memory Device
International Business Machines Corporation
0 cites
US122556512025
Reconfigurable Ring Oscillator (RO) Physical Unclonable Function (PUF)
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122565542025
Embedded MRAM Integrated with Super via and Dummy Fill
International Business Machines Corporation
0 cites
US122496432025
Stacked Planar Field Effect Transistors with 2D Material Channels
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122455172025
MRAM Stack with Reduced Height
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122243122025
Field Effect Transistors with Bottom Dielectric Isolation
International Business Machines Corporation
0 cites
US122118482025
Field Effect Transistors Comprising a Matrix of Gate-all-around Channels
International Business Machines Corporation
0 cites
US121837402024
Stacked Field-effect Transistors
International Business Machines Corporation
0 cites
US121763452024
Stacked FET with Independent Gate Control
International Business Machines Corporation
0 cites
US121549452024
Backside CMOS Trench Epi with Close N2P Space
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US121549712024
Forming Nanosheet Transistor Using Sacrificial Spacer and Inner Spacers
Adeia Semiconductor Solutions LLC
0 cites
US121549852024
Moon-shaped Bottom Spacer for Vertical Transport Field Effect Transistor (VTFET) Devices
International Business Machines Corporation
0 cites
US121503102024
Ferroelectric Random-access Memory Cell
International Business Machines Corporation
0 cites
US121425262024
Stacked Device with Buried Interconnect
International Business Machines Corporation
0 cites
US121366552024
Backside Electrical Contacts to Buried Power Rails
International Business Machines Corporation
0 cites
US121366562024
Semiconductor Structure Having Two-dimensional Channel
International Business Machines Corporation
0 cites
US121193412024
Electrostatic Discharge Diode Having Dielectric Isolation Layer
International Business Machines Corporation
0 cites
US121127822024
Compact MRAM Architecture with Magnetic Bottom Electrode
International Business Machines Corporation
0 cites
US121069692024
Substrate Thinning for a Backside Power Distribution Network
International Business Machines Corporation
0 cites
US121070142024
Nanosheet Transistors with Self-aligned Gate Cut
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US121007462024
Gate-all-around Field Effect Transistor with Bottom Dielectric Isolation
International Business Machines Corporation
0 cites
US120949722024
Gate-all-around Field Effect Transistors Having End Portions of Nanosheet Channel Layers Adjacent to Source/drain Regions Being Wider Than the Center Portions
Globalfoundries U.S. Inc.
0 cites
US120877702024
Complementary Field Effect Transistor Devices
International Business Machines Corporation
0 cites
US120876912024
Semiconductor Structures with Backside Gate Contacts
International Business Machines Corporation
0 cites
US120807092024
Dual Inner Spacer Epitaxy in Monolithic Stacked Fets
International Business Machines Corporation
0 cites
US120466432024
Semiconductor Structures with Power Rail Disposed Under Active Gate
International Business Machines Corporation
0 cites
US120272242024
Authenticity and Yield by Reading Defective Cells
International Business Machines Corporation
0 cites
US120094352024
Integrated Nanosheet Field Effect Transistors and Floating Gate Memory Cells
International Business Machines Corporation
0 cites
US120028502024
Nanosheet-based Semiconductor Structure with Dielectric Pillar
International Business Machines Corporation
0 cites
US120028082024
Dual Dielectric Pillar Fork Sheet Device
International Business Machines Corporation
0 cites
US119615442024
Spin-orbit Torque (SOT) Magnetoresistive Random-access Memory (MRAM) with Low Resistivity Spin Hall Effect (SHE) Write Line
International Business Machines Corporation
0 cites
US119634562024
MRAM Memory Array Yield Improvement
International Business Machines Corporation
0 cites
US119555262024
Thick Gate Oxide Device Option for Nanosheet Device
International Business Machines Corporation
0 cites
US119489442024
Optimized Contact Resistance for Stacked FET Devices
International Business Machines Corporation
0 cites
US119423742024
Nanosheet Field Effect Transistor with a Source Drain Epitaxy Replacement
International Business Machines Corporation
0 cites
US119359302024
Wrap-around-contact for 2d-channel Gate-all-around Field-effect-transistors
International Business Machines Corporation
0 cites
US119359292024
High Aspect Ratio Shared Contacts
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119233632024
Semiconductor Structure Having Bottom Isolation and Enhanced Carrier Mobility
International Business Machines Corporation
0 cites
US119160732024
Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites
US119076852024
Structure and Method for Random Code Generation
Globalfoundries U.S. Inc.
0 cites
US119087432024
Planar Devices with Consistent Base Dielectric
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118959342024
Phase Change Memory with Heater
International Business Machines Corporation
0 cites
US118943612024
Co-integrated Logic, Electrostatic Discharge, and Well Contact Devices on a Substrate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118944362024
Gate-all-around Monolithic Stacked Field Effect Transistors Having Multiple Threshold Voltages
International Business Machines Corporation
0 cites
US118958182024
Stacked FET SRAM
International Business Machines Corporation
0 cites
US118876432024
Integrated Magnetic Shield for MRAM Arrays
International Business Machines Corporation
0 cites
US118827722024
Conductive-bridging Semiconductor Memory Device Formed by Selective Deposition
International Business Machines Corporation
0 cites
US118761142024
Airgap Gate Spacer
International Business Machines Corporation
0 cites
US118695612024
Spin Orbit-torque Magnetic Random-access Memory (SOT-MRAM) with Cross-point Spin Hall Effect (SHE) Write Lines and Remote Sensing Read Magnetic Tunnel-junction (MTJ)
International Business Machines Corporation
0 cites
US118483842023
Semiconductor Device with Airgap Spacer Formation from Backside of Wafer
International Business Machines Corporation
0 cites
US118044362023
Self-aligned Buried Power Rail Cap for Semiconductor Devices
International Business Machines Corporation
0 cites
US118057042023
Via Interconnects for a Magnetoresistive Random-access Memory Device
International Business Machines Corporation
0 cites
US117913422023
Varactor Integrated with Complementary Metal-oxide Semiconductor Devices
International Business Machines Corporation
0 cites
US117913962023
Field Effect Transistor with Multiple Gate Dielectrics and Dual Work-functions with Precisely Controlled Gate Lengths
International Business Machines Corporation
0 cites
US117841252023
Wrap Around Cross-couple Contact Structure with Enhanced Gate Contact Size
International Business Machines Corporation
0 cites
US117772752023
Augmented Semiconductor Lasers with Spontaneous Emissions Blockage
International Business Machines Corporation
0 cites
US117642652023
Nanosheet Transistor with Inner Spacers
International Business Machines Corporation
0 cites
US117570362023
Moon-shaped Bottom Spacer for Vertical Transport Field Effect Transistor (VTFET) Devices
International Business Machines Corporation
0 cites
US117423502023
Metal Gate N/P Boundary Control by Active Gate Cut and Recess
International Business Machines Corporation
0 cites
US117355902023
Fin Stack Including Tensile-strained and Compressively Strained Fin Portions
International Business Machines Corporation
0 cites
US117299962023
High Retention Emram Using Vcma-assisted Writing
International Business Machines Corporation
0 cites
US117107682023
Hybrid Diffusion Break with EUV Gate Patterning
International Business Machines Corporation
0 cites
US116886262023
Nanosheet Transistor with Self-aligned Dielectric Pillar
International Business Machines Corporation
0 cites
US116887412023
Gate-all-around Devices with Isolated and Non-isolated Epitaxy Regions for Strain Engineering
International Business Machines Corporation
0 cites
US116827152023
Forming Nanosheet Transistor Using Sacrificial Spacer and Inner Spacers
Tessera LLC
0 cites
US116463062023
Co-integration of Gate-all-around FET, FINFET and Passive Devices on Bulk Substrate
International Business Machines Corporation
0 cites
US116212692023
Multi-level Ferroelectric Memory Cell
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116056722023
Steep-switch Field Effect Transistor with Integrated Bi-stable Resistive System
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116054092023
Mtj-based Analog Memory Device
International Business Machines Corporation
0 cites
US115693612023
Nanosheet Transistors with Wrap Around Contact
International Business Machines Corporation
0 cites