Patents/Inventors

Judson R. Holt

Ballston Lake, NYUS39 patents

42 Patents

US125574312026
Photodetectors with a Light-absorbing Layer at Least Partially Wrapped About a Waveguide Core
Globalfoundries U.S. Inc.
0 cites
US125298432026
Photonics Chip Structures Including a Reflector
Globalfoundries U.S. Inc.
0 cites
US125060702025
Electronically Programmable Fuse with Heating Transistors
Globalfoundries U.S. Inc.
0 cites
US124956232025
Lateral Phototransistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US124890132025
Semiconductor-on-insulator Field-effect Transistors Including Stress-inducing Components
Globalfoundries U.S. Inc.
0 cites
US123493742025
Lateral Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123493752025
Lateral Bipolar Transistors with Gate Structure Aligned to Extrinsic Base
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123362432025
Lateral Bipolar Transistor with Gated Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121764262024
Bipolar Transistor Structure on Semiconductor Fin and Methods to Form Same
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121599262024
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121426732024
Transistor with Wrap-around Extrinsic Base
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US120403882024
Lateral Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US120094122024
Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119905352024
Lateral Heterojunction Bipolar Transistor with Emitter And/or Collector Regrown from Substrate and Method
Globalfoundries U.S. Inc.
0 cites
US119772582024
Structure with Substrate-embedded Arrow Waveguide and Method
Globalfoundries U.S. Inc.
0 cites
US119490042024
Lateral Bipolar Transistors with Gate Structure Aligned to Extrinsic Base
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119425342024
Bipolar Transistor with Thermal Conductor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119359232024
Lateral Bipolar Transistor with Gated Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119161092024
Bipolar Transistor Structures with Base Having Varying Horizontal Width and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US119076852024
Structure and Method for Random Code Generation
Globalfoundries U.S. Inc.
0 cites
US118880312024
Fin-based Lateral Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites
US118880502024
Lateral Bipolar Transistor Structure with Inner and Outer Spacers and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US118813952024
Bipolar Transistor Structure on Semiconductor Fin and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US118815232024
Heterojunction Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118699582024
Heterojunction Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118627172024
Lateral Bipolar Transistor Structure with Superlattice Layer and Method to Form Same
Globalfoundries U.S. Inc.
0 cites
US118551952023
Transistor with Wrap-around Extrinsic Base
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US118551962023
Transistor with Wrap-around Extrinsic Base
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US118551972023
Vertical Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118430442023
Bipolar Transistor Structure on Semiconductor Fin and Methods to Form Same
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118376532023
Lateral Bipolar Junction Transistor Including a Stress Layer and Method
Globalfoundries U.S. Inc.
0 cites
US118109692023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118045422023
Annular Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118045432023
Diode Structures with One or More Raised Terminals
Globalfoundries U.S. Inc.
0 cites
US117990212023
Lateral Bipolar Transistor Structure with Marker Layer for Emitter and Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117770192023
Lateral Heterojunction Bipolar Transistor with Improved Breakdown Voltage and Method
Globalfoundries U.S. Inc.
0 cites
US117497472023
Bipolar Transistor Structure with Collector on Polycrystalline Isolation Layer and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US117107712023
Non-self-aligned Lateral Bipolar Junction Transistors
Globalfoundries U.S. Inc.
0 cites
US116950642023
Bipolar Junction Transistors with a Wraparound Base Layer
Globalfoundries U.S. Inc.
0 cites
US116371812023
Lateral Bipolar Transistors with Polysilicon Terminals
GLOBALFOUNDRIES U.S. Inc.
0 cites
US115880432023
Bipolar Transistor with Elevated Extrinsic Base and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US115750292023
Lateral Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites