8 Patents
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- US119161362024Lateral Bipolar Junction Transistors Including a Graded Silicon-germanium Intrinsic Base
Globalfoundries U.S. Inc.
0 cites - US118483742023Bipolar Junction Transistors Including a Portion of a Base Layer Inside a Cavity in a Dielectric Layer
Globalfoundries U.S. Inc.
0 cites - US118357642023Multiple-core Heterogeneous Waveguide Structures Including Multiple Slots
Globalfoundries U.S. Inc.
0 cites - US118030092023Photonics Structures Having a Locally-thickened Dielectric Layer
Globalfoundries U.S. Inc.
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