Patents/Inventors

Juan Boon Tan

SingaporeSG29 patents

25 Patents

US126107962026
Structure Including Discrete Dielectric Member for Protecting First Air Gap During Forming of Second Air Gap
GLOBALFOUNDRIES SINGAPORE PTE Ltd
0 cites
US125686312026
Three Terminal Memory Cells and Method of Making the Same
Globalfoundries Singapore Pte. Ltd.
0 cites
US125575632026
Layer Stacks for a Resistive Memory Element
Globalfoundries Singapore Pte. Ltd.
0 cites
US125507232026
Structure for Capacitor Having Defect-preventing Regions in Metal Electrode
Globalfoundries Singapore Pte. Ltd.
0 cites
US124842342025
Resistive Random-access Memory Elements with Lateral Sidewall Switching
Globalfoundries Singapore Pte. Ltd.
0 cites
US123880062025
Capacitor and Airgap Structure
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US122849242025
Programmable Interposer Using RRAM Platform
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US121598482024
Method of Forming a Sensor Device Having Moisture Sensitive Dielectric Layer with Integrally Formed Projections
GLOBALFOUNDRIES Singapore Ptd. Ltd.
0 cites
US121020202024
Semiconductor Memory Devices Having an Electrode with an Extension
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US120947632024
Metal-insulator-metal Capacitor (MIMCAP) and Methods of Forming the Same
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US120340392024
Three Electrode Capacitor Structure Using Spaced Conductive Pillars
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US120093262024
SRAM Bit Cells with Three-dimensional Integration
Globalfoundries Singapore Pte. Ltd.
0 cites
US119785102024
Memory Devices and Methods of Forming the Same
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US118550192023
Method of Forming a Sensor Device
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US118568752023
Memory Devices and Methods for Fabricating Memory Devices
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US118325382023
Resistive Memory Elements with an Embedded Heating Electrode
Globalfoundries Singapore Pte. Ltd.
0 cites
US118189692023
Memory Devices and Method of Forming the Same
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US117913792023
Galvanic Isolation Using Isolation Break Between Redistribution Layer Electrodes
GLOBALFOUNDRIES SINGAPORE PTE Ltd
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US117440852023
Semiconductor Devices and Methods of Forming Semiconductor Devices with Logic and Memory Regions Insulation Layers
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US117169142023
Non-volatile Memory Device with Filament Confinement
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US116903062023
Correlated Electron Resistive Memory Device and Integration Schemes
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
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US116597092023
Single Well One Transistor and One Capacitor Nonvolatile Memory Device and Integration Schemes
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US116462792023
Contact Pad Structures and Methods for Fabricating Contact Pad Structures
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US116417892023
Memory Cells and Methods for Forming Memory Cells
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US115521282023
Memory Device, Memory Array and Method of Forming the Same
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites