Patents/Inventors

Jr-jung Lin

HsinchuTW9 patents

11 Patents

US122439242025
Gate Structure with Non-linear Profile for Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122117502025
Mechanisms for Forming Finfet Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121426092024
Dummy Fin Between First and Second Semiconductor Fins
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121257512024
Method and Structure for Finfet Isolation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121131222024
Dummy Fin Profile Control to Enlarge Gate Process Window
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117642222023
Method of Forming a Dummy Fin Between First and Second Semiconductor Fins
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117217462023
Method and Structure for Finfet Comprising Patterned Oxide and Dielectric Layer Under Spacer Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116707112023
Metal Gate Electrode of a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116055642023
Method and Structure for Finfet Isolation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116057192023
Gate Structure with Desired Profile for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116007172023
Dummy FIN Profile Control to Enlarge Gate Process Window
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites