16 Patents
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- US123158122025Semiconductor Structure Having High Breakdown Voltage Etch-stop Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
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- US122875752025Photoresist and Method of Formation and Use
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122680962025Spacer Stack for Magnetic Tunnel Junctions
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121546082024Magnetic Tunnel Junction Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120805472024Interconnect System with Improved Low-k Dielectrics
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119901672024Magnetic Tunnel Junction Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119618032024Semiconductor Structure Having High Breakdown Voltage Etch-stop Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US117858582023Methods for Forming a Spacer Stack for Magnetic Tunnel Junctions
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US117696922023High Breakdown Voltage Inter-metal Dielectric Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US116505002023Photoresist and Method of Formation and Use
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites