Patents/Inventors

Jordan D. Greenlee

Boise, IDUS88 patents

86 Patents

US126145902026
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US126105462026
Electronic Devices Including an Implant Structure, for Protection Against Corrosion, and Related Systems and Methods
Micron Technology, Inc.
0 cites
US125989722026
Methods Used in Forming a Memory Array Comprising Strings of Memory Cells Including Insulator Walls in a Through-array-via Region
Micron Technology, Inc.
0 cites
US125936802026
Integrated Assemblies Having Liners or Rings Surrounding Regions of Conductive Posts
Micron Technology, Inc.
0 cites
US125637282026
Microelectronic Devices Including Implant Regions Adjacent to Dielectric Slot Structures, and Related Memory Devices, Electronic Systems, and Methods
Micron Technology, Inc.
0 cites
US125435592026
Memory Device Including Control Gates Having Tungsten Structure
Micron Technology, Inc.
0 cites
US125074052025
Integrated Assemblies and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US124942512025
Memory Circuitry and Method Used in Forming Memory Circuitry
Micron Technology, Inc.
0 cites
US124777322025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US124712812025
Methods Used in Forming Memory Arrays Having Strings of Memory Cells
Micron Technology, Inc.
0 cites
US124697782025
Methods Used in Forming a Memory Array Comprising Strings of Memory Cells and Memory Arrays Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US124647182025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
0 cites
US124628522025
Metal-containing Structures, and Methods of Treating Metal-containing Material to Increase Grain Size And/or Reduce Contaminant Concentration
Micron Technology, Inc.
0 cites
US124566852025
Microelectronic Devices Comprising a Boron-containing Material, and Related Electronic Systems and Methods
Micron Technology, Inc.
0 cites
US124530892025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
0 cites
US124396262025
Self-aligned Memory Architecture Comprising a Memory Array Associated with Pillars and Polysilicon Material
Micron Technology, Inc.
0 cites
US124329842025
Microelectronic Devices Including Stack Structures Having Doped Interfacial Regions, and Related Systems and Methods
Micron Technology, Inc.
0 cites
US124245532025
Memory Device Including Control Gates Having Tungsten Structure
Micron Technology, Inc.
0 cites
US124262612025
Integrated Circuitry Comprising a Memory Array Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US124262662025
Memory Arrays Comprising Strings of Memory Cells with Conductive Islands
Micron Technology, Inc.
0 cites
US124262692025
Barrier Structure for Preventing Etching to Control Circuitry
Micron Technology, Inc.
0 cites
US124084142025
Transistor and Memory Circuitry Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US124067282025
Methods of Forming Microelectronic Devices, and Related Microelectronic Devices, Memory Devices, and Electronic Systems
Micron Technology, Inc.
0 cites
US123811532025
Microelectronic Devices, Memory Devices, and Electronic Systems
0 cites
US123681012025
Apparatuses Including Interconnect Structures Including Dielectric Material Surrounded by Conductive Material, and Related Memory Devices
Battelle Energy Alliance, LLC
0 cites
US123546582025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US123425422025
Integrated Circuitry Comprising a Memory Array Comprising Strings of Memory Cells and Comprising a Stack Containing Non-stoichiometric Silicon Nitride
Micron Technology, Inc.
0 cites
US123224432025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US123158132025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US123006162025
Memory Device Including Staircase Structure Having Conductive Pads
Micron Technology, Inc.
0 cites
US123003182025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US122951402025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US122740632025
Integrated Assemblies and Methods of Forming Integrated Assemblies
0 cites
US122551432025
Microelectronic Devices Including Composite Pad Structures on Staircase Structures, and Related Methods, Memory Devices, and Electronic Systems
Micron Technology, Inc.
0 cites
US122508122025
Integrated Assemblies and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US122454262025
Staircase Formation in a Memory Array
Micron Technology, Inc.
0 cites
US122303252025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US121987622025
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US121855442024
Integrated Assemblies Having Vertically-spaced Channel Material Segments, and Methods of Forming Integrated Assemblies
0 cites
US121702502024
Microelectronic Devices and Memory Devices Including Conductive Levels Having Varying Compositions
Micron Technology, Inc.
0 cites
US121711012024
Microelectronic Devices Including Conductive Structures
Micron Technology, Inc.
0 cites
US121596742024
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US121441762024
Integrated Assemblies Having One or More Modifying Substances Distributed Within Semiconductor Material, and Methods of Forming Integrated Assemblies
0 cites
US121144922024
Memories Having Vertically Stacked Conductive Filled Structures
Micron Technology, Inc.
0 cites
US121130192024
Memory Devices Including Strings of Memory Cells, and Related Electronic Systems
Micron Technology, Inc.
0 cites
US120966332024
Memory Arrays and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
0 cites
US120824092024
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US120637822024
Integrated Assemblies Having Metal-containing Liners Along Bottoms of Trenches, and Methods of Forming Integrated Assemblies
0 cites
US120588612024
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US120417692024
Methods of Forming Microelectronic Devices
0 cites
US120340572024
Assemblies Which Include Wordlines Having a First Metal-containing Material at Least Partially Surrounding a Second Metal-containing Material and Having Different Crystallinity Than the Second Metal-containing Material
Micron Technology, Inc.
0 cites
US120027592024
Apparatuses Including a Conductive Contact Including a Dielectric Material Surrounded by a Conductive Material
0 cites
US119961512024
Memory Arrays and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US119905282024
Assemblies Having Conductive Structures with Three or More Different Materials
0 cites
US119744292024
Method Used in Forming a Memory Array Comprising Strings of Memory Cells and Using Bridges in Sacrificial Material in a Tier
Micron Technology, Inc.
0 cites
US119729782024
Conductive via of Integrated Circuitry, Memory Array Comprising Strings of Memory Cells, Method of Forming a Conductive via of Integrated Circuitry, and Method of Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US119633592024
Integrated Assemblies, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US119504162024
Integrated Assemblies and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US119504152024
Integrated Assemblies and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US119234152024
Integrated Assemblies, and Methods of Forming Integrated Assemblies
0 cites
US119105962024
Integrated Assemblies and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US119106062024
Integrated Assemblies Comprising Conductive Levels Having Two Different Metal-containing Structures Laterally Adjacent One Another, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US118958342024
Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US118943052024
Microelectronic Devices Including Staircase Structures, and Related Memory Devices and Electronic Systems
0 cites
US118958352024
Integrated Circuitry Comprising a Memory Array Comprising Strings of Memory Cells and Methods Including a Method Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US118567642023
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US118189682023
Conductive Interconnects Suitable for Utilization in Integrated Assemblies, and Methods of Forming Conductive Interconnects
Micron Technology, Inc.
0 cites
US118126102023
Three-dimensional Memory with Conductive Rails in Conductive Tiers, and Related Apparatus, Systems, and Methods
Micron Technology, Inc.
0 cites
US118056512023
Integrated Assemblies and Methods of Forming Integrated Assemblies
0 cites
US117929832023
Integrated Circuitry Comprising a Memory Array Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US117912682023
Tungsten Structures and Methods of Forming the Structures
Micron Technology, Inc.
0 cites
US117422822023
Conductive Interconnects
Micron Technology, Inc.
0 cites
US117216292023
Memory Device Including Staircase Structure Having Conductive Pads
Micron Technology, Inc.
0 cites
US117168482023
Integrated Assemblies, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US117156922023
Microelectronic Devices Including Conductive Rails, and Related Methods
Micron Technology, Inc.
0 cites
US117069182023
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US117055002023
Assemblies Having Conductive Structures with Three or More Different Materials
Micron Technology, Inc.
0 cites
US116462062023
Methods of Forming Tungsten Structures
Micron Technology, Inc.
0 cites
US116006302023
Integrated Assemblies and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US115944952023
Microelectronic Devices Including Conductive Levels Having Varying Compositions, and Related Memory Devices, Electronic Systems, and Methods
Micron Technology, Inc.
0 cites
US115813302023
Memory Array and Method Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US115748702023
Microelectronic Devices Including Conductive Structures, and Related Methods
Micron Technology, Inc.
0 cites
US115692582023
Integrated Assemblies Which Include Stacked Memory Decks, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US115691202023
Memory Arrays and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites
US115627732023
Metal-containing Structures, and Methods of Treating Metal-containing Material to Increase Grain Size And/or Reduce Contaminant Concentration
Micron Technology, Inc.
0 cites
US115520902023
Integrated Circuitry Comprising a Memory Array Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
Micron Technology, Inc.
0 cites