15 Patents
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- US122056462025Method of Operating a Memory Device by Performing a Program Operation Using a Coarse Verification Voltage and a Fine Verification Voltage and a Memory Device and a Memory System Employing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121657212024Nonvolatile Memory Device and Operation Method of Detecting Defective Memory Cells
Samsung Electronics Co., Ltd.
0 cites - US121317892024Nonvolatile Memory Device and Method of Operating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120400202024Memory Device, Method of Operating the Same, and Method of Operating Storage Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119901892024Nonvolatile Memory Device and Programming Method of Nonvolatile Memory
Samsung Electronics Co., Ltd.
0 cites - US119157632024Operating Method of Memory System Including Memory Controller and Nonvolatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
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- US118237532023Non-volatile Memory Device, Programming Method Thereof, and Storage Device Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116261712023Non-volatile Memory Device, Programming Method Thereof, and Storage Device Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115942932023Memory Device with Conditional Skip of Verify Operation During Write and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115746922023Nonvolatile Memory Device and Operation Method of Detecting Defective Memory Cells
Samsung Electronics Co., Ltd.
0 cites - US115627942023Storage Device Performing Read Operation by Using Time Interleaved Sampling Page Buffer
SAMSUNG ELECTRONICS CO., Ltd.
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