43 Patents
- US125884382026Layer Structures Including Dielectric Layer, Methods of Manufacturing Dielectric Layer, Electronic Device Including Dielectric Layer, and Electronic Apparatus Including Electronic Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US125139192025Method of Manufacturing Metal Nitride Film and Electronic Device Including Metal Nitride Film
Samsung Electronics Co., Ltd.
0 cites - US125016312025Capacitor, and Device Comprising the Same, and Method of Preparing the Same
Samsung Electronics Co., Ltd.
0 cites - US124889402025Electronic Device Including Dielectric Layer and Method of Manufacturing the Electronic Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US124462392025Capacitor, Method of Fabricating the Capacitor, and Electronic Device Including the Capacitor
Ajou, University Industry-academic Cooperation Foundation
0 cites - US124143132025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124083532025Device with Dielectric Metal Oxide Layers and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123982752025Group V Element-containing Film Compositions and Vapor Deposition of Group V Element-containing Film
L'air Liquide, Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude
0 cites - US123717872025Method of Forming Dielectric Films, New Precursors and Their Use in the Semi-conductor Manufacturing
L'air Liquide, Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude
0 cites - US123566402025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US123126772025Step Coverage Using an Inhibitor Molecule for High Aspect Ratio Structures
L'air Liquide, Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude
0 cites - 0 cites
- US122760262025Thin Film Structure Including Dielectric Material Layer, Method of Manufacturing the Same, and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121913482025Capacitors of Semiconductor Device Capable of Operating in High Frequency Operation Environment
Samsung Electronics Co., Ltd.
0 cites - US121734032024Group 6 Transition Metal-containing Compositions for Vapor Deposition of Group 6 Transition Metal-containing Films
L'air Liquide, Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude
0 cites - 0 cites
- US120823952024Semiconductor Memory Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US120716902024Thin Film Structure Including Dielectric Material Layer, and Method of Manufacturing the Same, and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US120517172024Anti-ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd
0 cites - US120340362024Semiconductor Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US119800232024Capacitor, Method of Controlling the Same, and Transistor Including the Same
Samsung Electronics Co., Ltd.
0 cites - US119359162024Dielectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118982442024Plasma-enhanced Chemical Vapor Deposition Method of Forming Lithium-based Film by Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118699262024High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device, and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118174752023Semiconductor Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118109462023Integrated Circuit Device Including Capacitor with Metal Nitrate Interfacial Layer
Samsung Electronics Co., Ltd.
0 cites - US117989802023Integrated Circuit Device and Electronic Device Including Capacitor with Interfacial Layer Containing Metal Element, Other Element, Nitrogen, and Oxygen
Samsung Electronics Co., Ltd.
0 cites - US117913722023Capacitors of Semiconductor Device Capable of Operating in High Frequency Operation Environment
Samsung Electronics Co., Ltd.
0 cites - US117788052023Semiconductor Memory Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US117610892023Thin Film Structure Including Dielectric Material Layer, Method of Manufacturing the Same, and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US117658872023Capacitor, Method of Controlling the Same, and Transistor Including the Same
Samsung Electronics Co., Ltd.
0 cites - US117497132023Capacitor Including Perovskite Material, Semiconductor Device Including the Capacitor, and Method of Manufacturing the Capacitor
Samsung Electronics Co., Ltd.
0 cites - US117497142023Capacitor Including Perovskite Material, Semiconductor Device Including the Capacitor, and Method of Manufacturing the Capacitor
Samsung Electronics Co., Ltd.
0 cites - US116580242023Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co.. Ltd.
0 cites - US116417302023Semiconductor Memory Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US115693412023Dielectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites