4 Patents
- US125884962026Semiconductor Device and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117929942023Three-dimensional Memory Device Including a String Selection Line Gate Electrode Having a Silicide Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116160782023Three-dimensional Semiconductor Memory Devices Having a Source Structure That Overlaps a Buried Insulating Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites