20 Patents
- 0 cites
- 0 cites
- US124647932025Nitride Semiconductor Buffer Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US123175362025Semiconductor Device and Power Switching System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US122887382025Semiconductor Device Package and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122182062025Power Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122182332025High Electron Mobility Transistor and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US121991742025High Electron Mobility Transistor and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US121193972024Semiconductor IC Device Including Passivation Layer for Inactivating a Dopant in a P-type Semiconductor Layer and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- 0 cites
- US120028792024High Electron Mobility Transistor and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118880592024Field Effect Transistor Including Gradually Varying Composition Channel
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US117570292023High Electron Mobility Transistor and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- 0 cites
- US115812692023Semiconductor Thin Film Structures and Electronic Devices Including the Same
Samsung Electronics Co., Ltd.
0 cites