13 Patents
- US126192742026Semiconductor Device Performing Clock Gating and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125936742026Semiconductor Transistor Device Including Backside Contact Structure Vertically Between Backside Power Rail and Source/drain Structure and Method of Forming Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US124904912025Integrated Circuit Devices Including a Back Side Power Distribution Network Structure and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US123896602025Semiconductor Device Including Backside Contact Structure with Silicide Layer Formed in FEOL Process
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122552482025Semiconductor Device Including Backside Contact Structure Having Positive Slope and Method of Forming Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121990422025Semiconductor Device Having Interconnection Lines with Different Linewidths and Metal Patterns
Samsung Electronics Co., Ltd
0 cites - US120343732024Electronic Devices and Methods of Controlling Power in Electronic Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119675542024Semiconductor Devices and Methods for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- 0 cites
- US115878672023Semiconductor Devices and Methods for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites