Jonathan Hollin

4 Patents

• US125123272025

  Surface Modification to Achieve Selective Isotropic Etch

  Tokyo Electron Limited

  0 cites
• US124446142025

  Etch Selectivity Modulation by Fluorocarbon Treatment

  Tokyo Electron Limited

  0 cites
• US122725582025

  Selective and Isotropic Etch of Silicon Over Silicon-germanium Alloys and Dielectrics; via New Chemistry and Surface Modification

  Tokyo Electron Limited

  0 cites
• US120274882024

  Methods of Forming Stacked Integrated Circuits Using Selective Thermal Atomic Layer Deposition on Conductive Contacts and Structures Formed Using the Same

  Georgia Tech Research Corporation

  0 cites