14 Patents
- US125686402026Multi-gate Devices with Multi-layer Inner Spacers and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123962402025Source/drain Silicide for Multigate Device Performance and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123611992025Integrated Circuit Layout Generation Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123175262025Multi-gate Devices and Fabricating the Same with Etch Rate Modulation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123007542025Channel Configurations with Stacked Segments for Gate-all-around Based Devices and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US122182142025Source/drain Silicide for Multigate Device Performance and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121258482024Semiconductor Device Structure Incorporating Air Gap
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120403812024Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119490012024Multi-gate Devices and Fabricating the Same with Etch Rate Modulation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119076362024Integrated Circuit Layout Generation Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119089192024Multi-gate Devices with Multi-layer Inner Spacers and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US116264002023Semiconductor Device Structure Incorporating Air Gap
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116213432023Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116161512023Channel Configuration for Improving Multigate Device Performance and Method of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites