5 Patents
- US125016462025Pi-type Trench Gate Silicon Carbide MOSFET Device and Fabrication Method Thereof
JSAB TECHNOLOGIES (SHENZHEN) Ltd.
0 cites - US124083982025Power Semiconductor Device and Preparation Method Thereof
JSAB TECHNOLOGIES (SHENZHEN) Ltd.
0 cites - US123639302025Electron Extraction Type Free-wheeling Diode Device and Preparation Method Thereof
JSAB TECHNOLOGIES (SHENZHEN) Ltd.
0 cites - US122374102025Trench Gate Silicon Carbide MOSFET Device and Fabrication Method Thereof
JSAB TECHNOLOGIES (SHENZHEN) Ltd.
0 cites - US119676312024Power Semiconductor Device and Manufacturing Method Thereof
JSAB TECHNOLOGIES (SHENZHEN) Ltd.
0 cites