Patents/Inventors

Johnatan A. Kantarovsky

South Burlington, VTUS27 patents

15 Patents

US126047352026
Device with Airgap Structure
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125817012026
Device with Dual Isolation Structure
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125504102026
High Electron Mobility Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US124179752025
Electrically Programmable Fuse Over Crystalline Semiconductor Materials
Globalfoundries U.S. Inc.
0 cites
US121838142024
Multi-channel Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121193832024
Transistor with Multi-level Self-aligned Gate and Source/drain Terminals and Methods
Globalfoundries U.S. Inc.
0 cites
US120466332024
Airgap Structures in Auto-doped Region Under One or More Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119161192024
Transistor with Self-aligned Gate and Self-aligned Source/drain Terminal(s) and Methods
Globalfoundries U.S. Inc.
0 cites
US119013042024
Integrated Circuit Structure with Fluorescent Material, and Related Methods
Globalfoundries U.S. Inc.
0 cites
US118815062024
Gate Structures with Air Gap Isolation Features
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117642582023
Airgap Isolation Structures
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117497172023
Transistor with Embedded Isolation Layer in Bulk Substrate
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117106552023
Integrated Circuit Structure with Semiconductor-based Isolation Structure and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US116463512023
Transistor with Multi-level Self-aligned Gate and Source/drain Terminals and Methods
Globalfoundries U.S. Inc.
0 cites
US115748672023
Non-planar Silicided Semiconductor Electrical Fuse
Globalfoundries U.S. Inc.
0 cites