2 Patents
- US116997532023LDMOS Transistors Including Vertical Gates with Multiple Dielectric Sections, and Associated Methods
Maxim Integrated Products, Inc.
0 cites - US115575882023Multi-transistor Device Including First and Second LDMOS Transistors Having Respective Drift Regions Separated in a Thickness Direction by a Shared RESURF Layer
MAXIM INTEGRATED PRODUCTS, Inc.
0 cites