23 Patents
- US125882822026Integrated Structure with Trap Rich Regions and Low Resistivity Regions
GLOBALFOUNDRIES U.S. Inc.
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- US123242272025Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
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- US118627172024Lateral Bipolar Transistor Structure with Superlattice Layer and Method to Form Same
Globalfoundries U.S. Inc.
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- US118481922023Heterojunction Bipolar Transistor with Emitter Base Junction Oxide Interface
GLOBALFOUNDRIES U.S. Inc.
0 cites - US117913342023Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - US117842242023Lateral Bipolar Transistor Structure with Base Over Semiconductor Buffer and Related Method
Globalfoundries U.S. Inc.
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- US117497472023Bipolar Transistor Structure with Collector on Polycrystalline Isolation Layer and Methods to Form Same
Globalfoundries U.S. Inc.
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- US116398952023Device Including Optofluidic Sensor with Integrated Photodiode
GLOBALFOUNDRIES U.S. Inc.
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