22 Patents
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- US123495002025Photodiode with Insulator Layer Along Intrinsic Region Sidewall
GLOBALFOUNDRIES U.S. Inc.
0 cites - US123242272025Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
- US122819962025Semiconductor Structure Including Photodiode-based Fluid Sensor and Methods
Globalfoundries U.S. Inc.
0 cites - US121703132024Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - US121549562024Structure Including Multi-level Field Plate and Method of Forming the Structure
Globalfoundries U.S. Inc.
0 cites - 0 cites
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- US117913342023Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - US117770432023Photodetectors with Substrate Extensions Adjacent Photodiodes
Globalfoundries U.S. Inc.
0 cites - US117404182023Barrier Structure with Passage for Waveguide in Photonic Integrated Circuit
Globalfoundries U.S. Inc.
0 cites - US117217192023Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites - US116644702023Photodiode with Integrated, Self-aligned Light Focusing Element
GLOBALFOUNDRIES U.S. Inc.
0 cites - US116581772023Semiconductor Device Structures with a Substrate Biasing Scheme
Globalfoundries U.S. Inc.
0 cites - US116398952023Device Including Optofluidic Sensor with Integrated Photodiode
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
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- US115814502023Photodiode And/or Pin Diode Structures with One or More Vertical Surfaces
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites
- US115436062023Photonics Chips with an Edge Coupler and a Continuous Crackstop
Globalfoundries U.S. Inc.
0 cites - US115455772023Semiconductor Structure with In-device High Resistivity Polycrystalline Semiconductor Element and Method
Globalfoundries U.S. Inc.
0 cites