Patents/Inventors

Johji Nishio

MachidaJP9 patents

9 Patents

US124068442025
Wafer Having a Silicon Carbide Crystal Layer with Stacking Faults Provided on a Silicon Carbide Base Body and Semiconductor Device Manufactured Using the Wafer
KABUSHIKI KAISHA TOSHIBA
0 cites
US121487992024
Semiconductor Device, Method for Manufacturing Semiconductor Device, Inverter Circuit, Drive Device, Vehicle, and Elevator
KABUSHIKI KAISHA TOSHIBA
0 cites
US119731162024
Semiconductor Device
KABUSHIKI KAISHA TOSHIBA
0 cites
US118482112023
Semiconductor Device, Method for Manufacturing Semiconductor Device, Inverter Circuit, Drive Device, Vehicle, and Elevator
Kabushiki Kaisha Toshiba
0 cites
US117640592023
Method for Manufacturing Substrate, Method for Manufacturing Semiconductor Device, Substrate, and Semiconductor Device
KABUSHIKI KAISHA TOSHIBA
0 cites
US117642692023
Semiconductor Device, Semiconductor Device Manufacturing Method, Inverter Circuit, Driver Device, Vehicle, and Elevator
KABUSHIKI KAISHA TOSHIBA
0 cites
US117642702023
Semiconductor Device, Method for Manufacturing Semiconductor Device, Inverter Circuit, Drive Device, Vehicle, and Elevator
KABUSHIKI KAISHA TOSHIBA
0 cites
US116211672023
Semiconductor Device, Method for Manufacturing Semiconductor Device, Inverter Circuit, Drive Device, Vehicle, and Elevator
Kabushiki Kaisha Toshiba
0 cites
US115630902023
Semiconductor Device
KABUSHIKI KAISHA TOSHIBA
0 cites