Johannes Josephus Theodorus Marinus Donkers

6 Patents

• US126157882026

  Utilization of Sacrificial Material for Current Electrode Formation

  NXP B.V.

  0 cites
• US125385072026

  Semiconductor Device Having an Extrinsic Base Region with a Monocrystalline Region and Method Therefor

  NXP B.V.

  0 cites
• US125016342025

  Method for Forming a Transistor with a Conductivity Doped Base Structure

  NXP USA, Inc.

  0 cites
• US121071432024

  Semiconductor Device with Extrinsic Base Region and Method of Fabrication Therefor

  NXP B.V.

  0 cites
• US119905362024

  Bipolar Transistors with Multilayer Collectors

  NXP B.V.

  0 cites
• US118551732023

  Transistor with Monocrystalline Base Structures

  NXP USA, Inc.

  0 cites