Patents/Inventors

Johannes Georg Laven

TaufkirchenDE9 patents

11 Patents

US121991462025
Power Semiconductor Device with Dv/dt Controllability and Low Gate Charge
Infineon Technologies AG
0 cites
US120340662024
Power Semiconductor Device Having a Barrier Region
Infineon Technologies AG
0 cites
US119490062024
Power Semiconductor Device with P-contact and Doped Insulation Blocks Defining Contact Holes
Infineon Technologies Dresden GmbH & Co. KG
0 cites
US118483542023
Diode Structure of a Power Semiconductor Device
Infineon Technologies AG
0 cites
US117642962023
Method for Manufacturing a Semiconductor Device
Infineon Technologies Austria AG
0 cites
US117216892023
Semiconductor Device Having a Semiconductor Channel Region and a Semiconductor Auxiliary Region
Infineon Technologies AG
0 cites
US116827002023
Power Semiconductor Device with Dv/dt Controllability and Low Gate Charge
Infineon Technologies AG
0 cites
US116109862023
Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
0 cites
US115946212023
Method of Processing a Power Semiconductor Device
Infineon Technologies AG
0 cites
US115814282023
IGBT with Dv/dt Controllability
Infineon Technologies AG
0 cites
US115814292023
Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
0 cites