9 Patents
- US125753282026High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access Memory (MRAM) Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125506232026Nitride Diffusion Barrier Structure for Spintronic Applications
Headway Technologies, Inc.
0 cites - US123568652025Multilayer Structure for Reducing Film Roughness in Magnetic Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122133852025Protective Passivation Layer for Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121676992024Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119569712024Cooling for PMA (perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (spin-torque Transfer-magnetic Random Access Memory) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118496462023Nitride Capping Layer for Spin Torque Transfer (STT) Magnetoresistive Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117588202023Protective Passivation Layer for Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116839942023Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and Improved Coercivity Field (hc)/switching Current Ratio
Headway Technologies, Inc.
0 cites