Joannes Theodorus Valentinus Hoogboom

3 Patents

• US125902742026

  Composition and Process for Selectively Etching a Hard Mask And/or an Etch-stop Layer in the Presence of Layers of Low-k Materials, Copper, Cobalt And/or Tungsten

  BASF SE

  0 cites
• US123312392025

  Composition and Process for Selectively Etching a Layer Comprising an Aluminium Compound in the Presence of Layers of Low-k Materials, Copper And/or Cobalt

  BASF SE

  0 cites
• US120246932024

  Imidazolidinethione-containing Compositions for Post-ash Residue Removal And/or for Oxidative Etching of a Layer or Mask Comprising Tin

  BASF SE

  0 cites