Joachim Weyers

7 Patents

• US125104202025

  Semiconductor Device with Sense Element

  Infineon Technologies AG

  0 cites
• US124778002025

  Semiconductor Diode and Manufacturing Method

  Infineon Technologies AG

  0 cites
• US124263502025

  Semiconductor Device with Diode Chain Connected to Gate Metallization

  Infineon Technologies AG

  0 cites
• US121193762024

  Power Semiconductor Device Having Vertically Parallel P-n Layers Formed in an Active Region Under Transistor Cells and Under a Non-depletable Extension Zone Formed in the Edge Region

  Infineon Technologies Austria AG

  0 cites
• US120574732024

  Silicon Carbide Device with Transistor Cell and Clamp Regions in a Well Region

  Infineon Technologies AG

  0 cites
• US118761332024

  Silicon Carbide Device with Transistor Cell and Clamp Region

  Infineon Technologies AG

  0 cites
• US116887322023

  Short Circuit Protection Structure in Mos-gated Power Devices

  Infineon Technologies Austria AG

  0 cites