Jinying Lin

3 Patents

• US125989642026

  Hardmask Integration for High Aspect Ratio Applications

  Tokyo Electron Limited

  0 cites
• US125639902026

  Densification and Reduction of Selectively Deposited Si Protective Layer for Mask Selectivity Improvement in HAR Etching

  Tokyo Electron Limited

  0 cites
• US124313622025

  Method for Etching High Aspect Ratio Features Within a Dielectric Using a Hard Mask Stack Having Multiple Hard Mask Layers

  Tokyo Electron Limited

  0 cites