51 Patents
- US126176952026Fluorite-based Material Thin Film and Semiconductor Device Comprising the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US125385282026Semiconductor Element and Multiplexer Including a Plurality of Semiconductor Elements
SEMES CO., Ltd.
0 cites - US124842872025Ferroelectric Material, and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124577922025Thin Film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124531062025Capacitor Device and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123826702025Thin Film Structure and Semiconductor Device Comprising the Same
Samsung Electronics Co., Ltd.
0 cites - US123827042025Semiconductor Device and Electronic Apparatus Including the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US123826442025Thin Film Structure Including Dielectric Material Layer and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US123693612025Integrated Circuit Including Transistors and a Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122836292025Ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US122667102025Thin Film Structure, Semiconductor Device Including the Same, and Semiconductor Apparatus Including Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122243462025Domain Switching Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122182172025Layer Structure Including Dielectric Layer, Methods of Manufacturing the Layer Structure, and Electronic Device Including the Layer Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US121913112025Semiconductor Device Including Ferroelectric Material, Neuromorphic Circuit Including the Semiconductor Device, and Neuromorphic Computing Apparatus Including the Neuromorphic Circuit
Samsung Electronics Co., Ltd.
0 cites - US121764132024Ferroelectric Structure Including a Ferroelectric Film Having a First Net Polarization Oriented Toward a First Polarization Enhancement Film and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121321092024Ferroelectric Semiconductor Device and Method of Extracting Defect Density of the Same
Samsung Electronics Co., Ltd.
0 cites - US121190602024Content-addressable Memory and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121071402024Thin Film Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121007492024Ferroelectric Thin-film Structures, Methods of Manufacturing the Same, and Electronic Devices Including the Ferroelectric Thin-film Structures
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US120878402024Semiconductor Device and Capacitor Including Hydrogen-incorporated Oxide Layer
Samsung Electronics Co., Ltd.
0 cites - US120340492024Superlattice Structure Including Two-dimensional Material and Device Including the Superlattice Structure
Center For Technology Licensing At Cornell University
0 cites - US119961502024Non-volatile Content Addressable Memory Device Having Simple Cell Configuration and Operating Method of the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US119731422024Integrated Circuit Including Transistors and a Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118880162024Image Sensor for High Photoelectric Conversion Efficiency and Low Dark Current
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118879892024Semiconductor Device Including Ferroelectric Material, Neuromorphic Circuit Including the Semiconductor Device, and Neuromorphic Computing Apparatus Including the Neuromorphic Circuit
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US118430372023Semiconductor Device and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118241192023Domain Switching Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118045362023Thin Film Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US117017282023Logic Switching Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US116463752023Ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US116264892023Optical Sensor and Image Sensor Including Graphene Quantum Dots
Samsung Electronics Co., Ltd.
0 cites - US116007122023Ferroelectric Structure Including a Ferroelectric Film Having a Net Polarization Oriented to a Polarization Enhancement Film and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US115750112023Superlattice Structure Including Two-dimensional Material and Device Including the Superlattice Structure
Center For Technology Licensing At Cornell University
0 cites