2 Patents
- US121661182024High Electron Mobility Transistors (HEMTS) Including a Yttrium (Y) and Aluminum Nitride (AIN) (YAIN) Alloy Layer
Qorvo US, Inc.
0 cites - US120742142024High Electron Mobility Transistor Device Having an Aluminum-doped Buffer Layer
Qorvo US, Inc.
0 cites