51 Patents
- US126220342026Semiconductor Transistor Structure Having an Epitaxial Oxide Spacer Layer
International Business Machines Corporation
0 cites - US125751452026Monolithic Stacked Field Effect Transistor (SFET) with Dual Middle Dielectric Isolation (MDI) Separation
International Business Machines Corporation
0 cites - US125637962026Extended Lower Source/drain for Stacked Field-effect Transistor
International Business Machines Corporation
0 cites - US125637862026Single Work Function Metal and Multiple Threshold Voltage Scheme
International Business Machines Corporation
0 cites - US125573412026Negative Capacitance Gate-all-around Transistor with Tunable Capacitance Ratio
International Business Machines Corporation
0 cites - USD11077342025Display Screen or Portion Thereof with a Graphical User Interface
BEIJING KUAIMAJIABIAN TECHNOLOGY CO., Ltd.
0 cites - US124647962025Gate Induced Drain Leakage Reduction in Finfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US124463062025Stacked Field Effect Transistor Structure with Independent Gate Control Between Top and Bottom Gates
International Business Machines Corporation
0 cites - US124329602025Wraparound Contact with Reduced Distance to Channel
International Business Machines Corporation
0 cites - US124224652025In-situ Chip Design for Pulse IV Self-heating Evaluation
International Business Machines Corporation
0 cites - US124084312025Gate Stack Quality for Gate-all-around Field-effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US124083692025Vertical Transport Field Effect Transistors Having Different Threshold Voltages Along the Channel
International Business Machines Corporation
0 cites - 0 cites
- US123175552025Gate-all-around Nanosheet Field Effect Transistor Integrated with Fin Field Effect Transistor
International Business Machines Corporation
0 cites - 0 cites
- US122306762025Nanosheet Device with Tri-layer Bottom Dielectric Isolation
International Business Machines Corporation
0 cites - USD10559612024Display Screen or Portion Thereof with a Graphical User Interface
BEIJING KUAMAJIABIAN TECHNOLOGY CO., Ltd.
0 cites - US121563952024Metal Gate Patterning for Logic and SRAM in Nanosheet Devices
International Business Machines Corporation
0 cites - US121366712024Gate-all-around Field-effect Transistor Having Source Side Lateral End Portion Smaller Than a Thickness of Channel Portion and Drain Side Lateral End Portion
International Business Machines Corporation
0 cites - 0 cites
- US121193412024Electrostatic Discharge Diode Having Dielectric Isolation Layer
International Business Machines Corporation
0 cites - US121086922024Three Terminal Phase Change Memory with Self-aligned Contacts
International Business Machines Corporation
0 cites - 0 cites
- US119905302024Replacement-channel Fabrication of III-V Nanosheet Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119731412024Nanosheet Transistor with Ferroelectric Region
International Business Machines Corporation
0 cites - US119489442024Optimized Contact Resistance for Stacked FET Devices
International Business Machines Corporation
0 cites - US119087432024Planar Devices with Consistent Base Dielectric
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US118944442024Secure Chip Identification Using Random Threshold Voltage Variation in a Field Effect Transistor Structure as a Physically Unclonable Function
International Business Machines Corporation
0 cites - US118943612024Co-integrated Logic, Electrostatic Discharge, and Well Contact Devices on a Substrate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US118815052024Tri-layer STI Liner for Nanosheet Leakage Control
International Business Machines Corporation
0 cites - US118618102024Image Dehazing Method, Apparatus, and Device, and Computer Storage Medium
TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
0 cites - US118551802023Gate Induced Drain Leakage Reduction in Finfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US118429982023Semiconductor Device and Method of Forming the Semiconductor Device
International Business Machines Corporation
0 cites - US118308772023Co-integrated Channel and Gate Formation Scheme for Nanosheet Transistors Having Separately Tuned Threshold Voltages
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US118108282023Transistor Boundary Protection Using Reversible Crosslinking Reflow
International Business Machines Corporation
0 cites - 0 cites
- US117988672023Half Buried Nfet/pfet Epitaxy Source/drain Strap
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117783632023Audio Data Transmission Method Applied to Switching Between Single-earbud Mode and Double-earbud Mode of TWS Headset and Device
Huawei Technologies Co., Ltd.
0 cites - US117770342023Hybrid Complementary Field Effect Transistor Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117569962023Formation of Wrap-around-contact for Gate-all-around Nanosheet FET
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117569602023Multi-threshold Voltage Gate-all-around Transistors
International Business Machines Corporation
0 cites - US117424092023Replacement-channel Fabrication of III-V Nanosheet Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117355932023Gate Stack Dipole Compensation for Threshold Voltage Definition in Transistors
International Business Machines Corporation
0 cites - US117356282023Nanosheet Metal-oxide Semiconductor Field Effect Transistor with Asymmetric Threshold Voltage
International Business Machines Corporation
0 cites - US117354802023Transistor Having Source or Drain Formation Assistance Regions with Improved Bottom Isolation
International Business Machines Corporation
0 cites - US117106992023Complementary FET (CFET) Buried Sidewall Contact with Spacer Foot
International Business Machines Corporation
0 cites - US116887412023Gate-all-around Devices with Isolated and Non-isolated Epitaxy Regions for Strain Engineering
International Business Machines Corporation
0 cites - 0 cites
- US115878372023Oxygen Vacancy Passivation in High-k Dielectrics for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites - US115750232023Secure Chip Identification Using Random Threshold Voltage Variation in a Field Effect Transistor Structure as a Physically Unclonable Function
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites