14 Patents
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- US124955552025Method and Structure for Forming Stairs in Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123493512025Three-dimensional Memory Devices with Drain-select-gate Cut Structures and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US120824142024Three-dimensional Memory Devices with Drain-select-gate Cut Structures and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US119905062024Three-dimensional Memory Devices Having Isolation Structure for Source Select Gate Line and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119858242024Three-dimensional Memory Devices Having Dummy Channel Structures and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119504182024Method and Structure for Forming Stairs in Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119374272024Method for Forming Three-dimensional Memory Device with Sacrificial Channels
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US118007072023Three-dimensional Memory Device with Reduced Local Stress
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117119212023Three-dimensional Memory Devices Having Isolation Structure for Source Select Gate Line and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115520972023Method and Structure for Forming Stairs in Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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