42 Patents
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- US124955782025Semiconductor Devices Including Source/drain Layers and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
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- US124904682025Semiconductor Device Including Single-crystalline Silicon Oxide Barrier Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124531172025Source/drain Region of a Semiconductor Device Having an Oxygen Doped Barrier Layer Formed Between First and Second Epitaxial Layers
Samsung Electronics Co., Ltd.
0 cites - US124531412025Semiconductor Device Including Barrier Layer Between Active Region and Semiconductor Layer and Method of Forming the Same
Samsung Electronics Co., Ltd.
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- US123289372025Integrated Circuit Devices and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122888052025Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122782712025Semiconductor Device Having Capping Layers with Different Germanium Concentrations Over an Active Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122680222025Semiconductor Device Including Air Gap Regions Below Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites - US122565642025Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122565662025Semiconductor Device Channel Layers Stacked Vertically and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US122438742025Method of Forming a Static Random-access Memory (SRAM) Cell with Fin Field Effect Transistors
Samsung Electronics Co., Ltd.
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- US121780342024Semiconductor Device Including Buried Contact and Method for Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121660812024Semiconductor Device-including Source and Drain Regions and Superlattice Pattern Having a Pillar Shape
Samsung Electronics Co., Ltd.
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- US121549882024Multi-oxide-semiconductor Field-effect Transistor with Stacked Source/drain Structure
SAMSUNG ELECTRONICS CO., Ltd.
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- US120340432024Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119964432024Semiconductor Device Including Barrier Layer Between Active Region and Semiconductor Layer and Method of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US119905492024Semiconductor Device Including Active Region and Gate Structure
Samsung Electronics Co., Ltd.
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- US118880282024Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US118442072023Semiconductor Device Including Buried Contact and Method for Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US116264012023Integrated Circuit Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
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