3 Patents
- US126158632026Image Sensor Having an Active Pattern of Metal Oxide Semiconductor Doped with Nitrogen Disposed on a Hydrogen Blocking Layer
IUCF-HYU (Industry-university Cooperation Foundation Hanyang University)
0 cites - US125598382026Sealing Structure and Manufacturing Method Therefor
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
0 cites - US120093722024Display Device Including Hydrogen Diffusion Barrier Film, and Method for Manufacturing Same
ISAC RESEARCH Inc.
0 cites