7 Patents
- US125139132025Selective Element Doped with Chalcogen Element
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
0 cites - US124265212025Selector Device Comprising Polycrystalline Metal Oxide Layer and Cross-point Memory Comprising Same
Industry-university Cooperation Foundation Hanyang University
0 cites - US124123982025Video-learning Monitoring Device and Method Therefor0 cites
- US123612672025Operation Method of Neural Network Element Using Spin-orbit Torque
Industry-university Cooperation Foundation Hanyang University
0 cites - US122741782025Logic Element Using Spin-orbit Torque and Magnetic Tunnel Junction Structure
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
0 cites - US121086832024Magnetic Tunnel Junction Device and Operating Method Therefor
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
0 cites - US119179262024Synthetic Antiferromagnetic Material and Multibit Memory Using Same
Industry-university Cooperation Foundation Hanyang University
0 cites