Jin-hong Park

6 Patents

• US125326732026

  Method of Forming PN Junction Including Transition Metal Dichalcogenide, Method of Fabricating Semiconductor Device Using the Same, and Semiconductor Device Fabricated by the Same

  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

  0 cites
• US122306512025

  Photodetector and Image Sensor Including the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US122060212025

  Negative Differential Resistance Device

  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

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• US121208832024

  Semiconductor Memory Device Using a Ferroelectric Characteristic of Charge Storage Layer and Operating Method Thereof

  RESEARCH AND BUSINESS FOUNDATION SUNGKY

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• US116707142023

  Negative Differential Resistance Device

  Research & Business Foundation Sungkyunkwan University

  0 cites
• US115880662023

  Tandem Solar Cells Having a Top or Bottom Metal Chalcogenide Cell

  The Board Of Trustees Of The Leland Stanford Junior Univesity

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