Patents/Inventors

Jianquan Jia

WuhanCN31 patents

21 Patents

US126021652026
Method of Improving Programming Operations in 3D NAND Systems
Yangtze Memory Technologies Co., Ltd.
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US125370672026
Method of Operating Memory, Memory, and Memory System
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US125121452025
Non-volatile Memory Device and Control Method
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US124999492025
Memory Devices and Operating Methods Thereof, Memory Systems
Yangtze Memory Technologies Co., Ltd.
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US124126092025
Method of Reducing Program Disturbance in Memory Device and Memory Device Utilizing Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US123546682025
Programming Method for Semiconductor Device and Semiconductor Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US122549302025
Control Method for Memory Erase Operations, Apparatus, and Storage Medium Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US122169072025
Method of Improving Programming Operations in 3D NAND Systems
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US121760432024
Three-dimensional Memory Device Programming with Reduced Disturbance
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US121657162024
Method of Performing Programming Operation and Related Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US121596652024
Method of Programming Memory Device and Related Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US121364532024
Systems, Methods and Media of Optimization of Temporary Read Errors in 3D NAND Memory Devices
Yangtze Memory Technologies Co., Ltd.
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US121004562024
Memory Device and Erasing and Verification Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US118622302024
Non-volatile Memory Device and Control Method
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US118643792024
Three-dimensional Memory and Control Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US118480582023
Method and Memory Used for Reducing Program Disturbance by Adjusting Voltage of Dummy Word Line
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US117105292023
Three-dimensional Memory Device Programming with Reduced Disturbance
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US117051902023
Method of Programming Memory Device and Related Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116766462023
Method of Reducing Program Disturbance in Memory Device and Memory Device Utilizing Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116766652023
Memory Device and Erasing and Verification Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116261702023
Method and Memory Used for Reducing Program Disturbance by Adjusting Voltage of Dummy Word Line
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites