40 Patents
- US126047232026Metal Capping Layer for Reducing Gate Resistance in Semiconductor Devices
TAIWAN SEMICONDICTOR MANUFACTURING COMPANY, Ltd
0 cites - US125934962026Multiple Threshold Voltage Implementation Through Lanthanum Incorporation
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125751722026Metal Gate Electrode Formation of Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125385712026Transistor Gate Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124778132025Metal Gates for Multi-gate Semiconductor Devices and Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124630402025Methods for Doping High-k Metal Gates for Tuning Threshold Voltages
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124531652025P-type Semiconductor Devices with Different Threshold Voltages and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US124446082025Structure Having Gate Spacers with Projecting Portions Extending Into a Gate Dielectric
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124330112025Post Gate Dielectric Processing for Semiconductor Device Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124263092025Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124143292025Forming Low-resistance Capping Layer Over Metal Gate Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US123175742025Device Providing Multiple Threshold Voltages and Methods of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123026272025Semiconductor Device with Non-conformal Gate Dielectric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122888112025Metal Gate for Gate-all-around Devices and Methods for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US122665752025Multiple Gate Field-effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122551042025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122307132025Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122182132025Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121710912024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121549642024Metal Gates with Layers for Transistor Threshold Voltage Tuning and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121426402024Semiconductor Structures with Multiple Threshold Voltage Offerings and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120949482024Forming Low-resistance Capping Layer Over Metal Gate Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120742062024Integrated Circuit Device with Improved Reliability
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US120402352024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120417602024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120226432024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120094002024Device Providing Multiple Threshold Voltages and Methods of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119087452024Semiconductor Device with Non-conformal Gate Dieletric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118942762024Multiple Gate Field-effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US117770042023Fin Field Effect Transistor (finfet) Device Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117354842023Post Gate Dielectric Processing for Semiconductor Device Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116642792023Multiple Threshold Voltage Implementation Through Lanthanum Incorporation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116055632023Semiconductor Device with Non-conformal Gate Dielectric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites