Patents/Inventors

Jiahui Yuan

Fremont, CAUS82 patents

79 Patents

US126145982026
Fake Fast Plane Detection in Early Program Termination
Sandisk Technologies, Inc.
0 cites
US126145912026
Apparatus and Methods for Negative Threshold Voltages for Nonvolatile Memory Devices
Sandisk Technologies, Inc.
0 cites
US126031352026
Uniform GIDL Current During NAND Erase
Sandisk Technologies, Inc.
0 cites
US126031392026
Non-volatile Memory with High Performance Read
Sandisk Technologies, Inc.
0 cites
US125964952026
Power Saving During Open Block Read with Large Block Openness
Sandisk Technologies, Inc.
0 cites
US125974732026
Multi-step Read Pass Voltage Discharge for ICC Reduction
Sandisk Technologies, Inc.
0 cites
US125922912026
Non-volatile Memory with In-place Error Updating and Correction
Sandisk Technologies, Inc.
0 cites
US125922862026
Nonvolatile Memory Read with Asymmetric Read-pass Voltages
Sandisk Technologies, Inc.
0 cites
US125622342026
Non-volatile Memory with In-place Error Correction
Sandisk Technologies, Inc.
0 cites
US125556402026
Suppression of Peak ICC During Block Selection in Non-volatile Memories
Sandisk Technologies, Inc.
0 cites
US125311312026
Non-volatile Memory with Multiple Data Resolutions
Sandisk Technologies, Inc.
0 cites
US124999462025
Reliability Improvement Through Delay Between Multi-stage Programming Steps in Non-volatile Memory Structures
Sandisk Technologies, Inc.
0 cites
US124942602025
Program Verify Word Line Ramping Delay for Lower Current Consumption Mode
Sandisk Technologies, Inc.
0 cites
US124888332025
Variable Read Method for Read Time Performance Improvement of Non-volatile Memory
Sandisk Technologies, Inc.
0 cites
US124825272025
Apparatus and Methods for Read Retry with Conditional Data Refresh
Sandisk Technologies, Inc.
0 cites
US124759592025
Non-volatile Memory with Current Detection Circuit
Sandisk Technologies, Inc.
0 cites
US124759582025
Non-volatile Memory with Decline State Operation
Sandisk Technologies, Inc.
0 cites
US124628882025
Non-volatile Memory with Neighbor Plane Program Disturb Avoidance
Sandisk Technologies, Inc.
0 cites
US124628772025
Program Pulse Duration Increase for NAND Program Failure
Sandisk Technologies, Inc.
0 cites
US124565352025
Non-volatile Memory with Efficient Setting of Initial Program Voltage
Sandisk Technologies, Inc.
0 cites
US124565312025
Separate Peak Current Checkpoints for Closed and Open Block Read ICC Countermeasures in NAND Memory
Sandisk Technologies, Inc.
0 cites
US124566872025
Three-dimensional Memory Device with Source Line Isolation and Method of Making the Same
Sandisk Technologies, Inc.
0 cites
US124499812025
Non-volatile Memory That Dynamically Reduces the Number of Bits of Data Stored per Memory Cell
Sandisk Technologies, Inc.
0 cites
US124312032025
Memory Program-verify with Adaptive Sense Time Based on Row Location
Sandisk Technologies, Inc.
0 cites
US124300462025
Early Program Termination with Adaptive Temperature Compensation
Sandisk Technologies, Inc.
0 cites
US124178092025
Open Block Read ICC Reduction
Sandisk Technologies, Inc.
0 cites
US124067432025
Non-volatile Memory with Smart Control of Overdrive Voltage
Sandisk Technologies, Inc.
0 cites
US123996532025
Suspend-resume-go Techniques for Memory Devices
Sandisk Technologies, Inc.
0 cites
US123944912025
Apparatus and Method for Selectively Reducing Charge Pump Speed During Erase Operations
Sandisk Technologies, Inc.
0 cites
US123878022025
Non-volatile Memory with Lower Current Program-verify
Sandisk Technologies, Inc.
0 cites
US123546782025
Non-volatile Memory with Efficient Testing
Sandisk Technologies, Inc.
0 cites
US123546642025
Non-volatile Memory with Loop Dependant Ramp-up Rate
Sandisk Technologies, Inc.
0 cites
US123477792025
Three-dimensional Memory Device with Source Line Isolation and Method of Making the Same
Sandisk Technologies, Inc.
0 cites
US123465622025
Non-volatile Memory Bitmap for Garbage Collection
Sandisk Technologies, Inc.
0 cites
US123465782025
Distributed Temperature Sensing Scheme to Suppress Peak Icc in Non-volatile Memories
Sandisk Technologies, Inc.
0 cites
US123071042025
Non-volatile Memory with Secure Erase
Sandisk Technologies, Inc.
0 cites
US122937972025
Apparatus and Methods for Smart Verify with Adaptive Voltage Offset
Sandisk Technologies, Inc.
0 cites
US122885862025
Non-volatile Memory with Sub-planes Having Individually Biasable Source Lines
Sandisk Technologies, Inc.
0 cites
US122493782025
CELSRC Voltage Separation Between SLC and XLC for SLC Program Average ICC Reduction
Sandisk Technologies LLC
0 cites
US122240112025
Non-volatile Memory with Concurrent Sub-block Programming
Sandisk Technologies, Inc.
0 cites
US121760322024
Word Line Dependent Pass Voltage Ramp Rate to Improve Performance of NAND Memory
Sandisk Technologies LLC
0 cites
US121609892024
Three-dimensional Memory Device Including an Isolation-trench Etch Stop Layer and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites
US121538012024
Non-volatile Memory with Optimized Operation Sequence
Sandisk Technologies LLC
0 cites
US121546302024
Non-volatile Memory with Tuning of Erase Process
Sandisk Technologies LLC
0 cites
US121476952024
Non-volatile Memory with Adapting Erase Process
Sandisk Technologies LLC
0 cites
US121484892024
Early Detection of Programming Failure for Non-volatile Memory
Sandisk Technologies LLC
0 cites
US121190652024
Non-volatile Memory with Zoned Control for Limiting Programming for Different Groups of Non-volatile Memory Cells
Sandisk Technoloiges LLC
0 cites
US121059632024
NAND String Read Voltage Adjustment
Sandisk Technologies LLC
0 cites
US120997282024
Non-volatile Memory with Programmable Resistance Non-data Word Line
Sandisk Technologies LLC
0 cites
US121004612024
Non-volatile Memory with Suspension Period During Programming
Sandisk Technologies LLC
0 cites
US120945372024
Non-volatile Memory with Differential Temperature Compensation for Super Page Programming
Sandisk Technologies LLC
0 cites
US120945462024
Non-volatile Memory with Zone Based Program Speed Adjustment
Sandisk Technologies LLC
0 cites
US120571572024
Low Power Mode with Read Sequence Adjustment
Sandisk Techn Ologies LLC
0 cites
US120571752024
Memory Apparatus and Method of Operation Using State Dependent Strobe Tier Scan to Reduce Peak ICC
Sandisk Technologies LLC
0 cites
US120514682024
Soft Erase Process During Programming of Non-volatile Memory
Sandisk Technologies LLC
0 cites
US120463142024
NAND Memory with Different Pass Voltage Ramp Rates for Binary and Multi-state Memory
Sandisk Technologies, Inc.
0 cites
US119728122024
Non-volatile Memory with Data Refresh Based on Data States of Adjacent Memory Cells
Sandisk Technologies LLC
0 cites
US119728142024
Verify Techniques for Current Reduction in a Memory Device
Sandisk Technologies, LLC
0 cites
US119728032024
Word Line Zone Dependent Pre-charge Voltage
Sandisk Technologies, LLC
0 cites
US119728052024
Non-volatile Memory with Narrow and Shallow Erase
Sandisk Technologies LLC
0 cites
US119673882024
Stress Test for Grown Bad Blocks
Western Digital Technologies, Inc.
0 cites
US119615632024
Balancing Peak Power with Programming Speed in Non-volatile Memory
Sandisk Technologies LLC
0 cites
US119551842024
Memory Cell Group Read with Compensation for Different Programming Speeds
Sandisk Technologies LLC
0 cites
US119355932024
Dummy Cell Resistance Tuning in NAND Strings
Sandisk Technologies LLC
0 cites
US118940712024
Non-volatile Memory with Differential Temperature Compensation for Bulk Programming
Sandisk Technologies LLC
0 cites
US118876702024
Controlling Bit Line Pre-charge Voltage Separately for Multi-level Memory Cells and Single-level Memory Cells to Reduce Peak Current Consumption
Sandisk Technologies LLC
0 cites
US118750432024
Loop Dependent Word Line Ramp Start Time for Program Verify of Multi-level NAND Memory
Sandisk Technologies LLC
0 cites
US118622492024
Non-volatile Memory with Staggered Ramp Down at the End of Pre-charging
Sandisk Technologies LLC
0 cites
US118372962023
Non-volatile Memory with Adjusted Bit Line Voltage During Verify
Sandisk Technologies LLC
0 cites
US117910012023
Non-volatile Memory with Updating of Read Compare Voltages Based on Measured Current
SANDISK TECHNOLOGIES LLC
0 cites
US117909942023
Non-volatile Memory with Reverse State Program
Western Digital Technologies, Inc.
0 cites
US117906552023
Video Sampling Method and Apparatus Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117566302023
Obtaining Threshold Voltage Measurements for Memory Cells Based on a User Read Mode
Western Digital Technologies, Inc.
0 cites
US117587182023
Three Dimensional Memory Device Containing Truncated Channels and Method of Operating the Same with Different Erase Voltages for Different Bit Lines
SANDISK TECHNOLOGIES LLC
0 cites
US117052062023
Modifying Program and Erase Parameters for Single-bit Memory Cells to Improve Single-bit/multi-bit Hybrid Ratio
Sandisk Technologies LLC
0 cites
US116640752023
Sub-block Programming Mode with Multi-tier Block
Sandisk Technologies LLC
0 cites
US116578832023
Isolating Problematic Memory Planes to Avoid Neighbor Plan Disturb
Western Digital Technologies, Inc.
0 cites
US116316862023
Three-dimensional Memory Array Including Dual Work Function Floating Gates and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites
US115876192023
Block Configuration for Memory Device with Separate Sub-blocks
Sandisk Technologies LLC
0 cites