Patents/Inventors

Jiacen Guo

Sunnyvale, CAUS41 patents

35 Patents

US126031392026
Non-volatile Memory with High Performance Read
Sandisk Technologies, Inc.
0 cites
US125866462026
Precharge Scheme During Programming of a Memory Device
Sandisk Technologies, Inc.
0 cites
US125301422026
Temperature Compensation for Pre-charge Spike in Multi-pass Programming
Sandisk Technologies, Inc.
0 cites
US125121682025
Programming Techniques to Improve Erase State Upper Tails in a Memory Device
Sandisk Technologies, Inc.
0 cites
US124684622025
Multi-tier Sub-block Mode Operation
Sandisk Technologies, Inc.
0 cites
US124695592025
Non-volatile Memory with Sub-blocks
Sandisk Technologies, Inc.
0 cites
US124695602025
Non-volatile Memory with Dummy Word Line Assisted Pre-charge
Sandisk Technologies, Inc.
0 cites
US124695682025
Non-volatile Memory with Early Ramp for Improved Performance
Sandisk Technologies, Inc.
0 cites
US124312032025
Memory Program-verify with Adaptive Sense Time Based on Row Location
Sandisk Technologies, Inc.
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US123944892025
In-place Write Techniques Without Erase in a Memory Device
Sandisk Technologies, Inc.
0 cites
US123546812025
Channel Pre-charge Process in a Memory Device
Sandisk Technologies, Inc.
0 cites
US122549312025
Three-bit-per-cell Programming Using a Four-bit-per-cell Programming Algorithm
Sandisk Technologies, Inc.
0 cites
US122435912025
In-place Write Techniques Without Erase in a Memory Device
Sandisk Technologies, Inc.
0 cites
US122294152025
Hole Channel Pre-charge to Enable Large-volume In-place Data Sanitization of Non-volatile Memory
Sandisk Technologies LLC
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US122056542025
MLC Programming Techniques in a Memory Device
Sandisk Technologies LLC
0 cites
US121760372024
Non-volatile Memory with Different Word Line to Word Line Pitches
Sandisk Technologies LLC
0 cites
US121423152024
Low Power Multi-level Cell (MLC) Programming in Non-volatile Memory Structures
Sandisk Technologies LLC
0 cites
US121190652024
Non-volatile Memory with Zoned Control for Limiting Programming for Different Groups of Non-volatile Memory Cells
Sandisk Technoloiges LLC
0 cites
US121128002024
High Speed Multi-level Cell (MLC) Programming in Non-volatile Memory Structures
Sandisk Technologies LLC
0 cites
US121128122024
Non-volatile Memory with Early Dummy Word Line Ramp Down After Precharge
Sandisk Technologies LLC
0 cites
US121004612024
Non-volatile Memory with Suspension Period During Programming
Sandisk Technologies LLC
0 cites
US119728062024
Read Techniques to Reduce Read Errors in a Memory Device
Sandisk Technologies, LLC
0 cites
US119728132024
Systems and Methods for Adapting Sense Time
Sandisk Technologies, LLC
0 cites
US119728192024
Non-volatile Memory with One Sided Phased Ramp Down After Program-verify
Sandisk Technologies LLC
0 cites
US119728202024
Non-volatile Memory with Tier-wise Ramp Down After Program-verify
Sandisk Technologies LLC
0 cites
US119551842024
Memory Cell Group Read with Compensation for Different Programming Speeds
Sandisk Technologies LLC
0 cites
US119421572024
Variable Bit Line Bias for Nonvolatile Memory
Sandisk Technologies LLC
0 cites
US119230192024
Data Retention Reliability
SANDISK TECHNOLOGIES LLC
0 cites
US119010162024
Fast Open Block Erase in Non-volatile Memory Structures
SANDISK TECHNOLOGIES LLC
0 cites
US118940722024
Two-side Staircase Pre-charge in Sub-block Mode of Three-tier Non-volatile Memory Architecture
SANDISK TECHNOLOGIES LLC
0 cites
US118812712024
Non-volatile Memory with Engineered Channel Gradient
Sandisk Technologies LLC
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US118622492024
Non-volatile Memory with Staggered Ramp Down at the End of Pre-charging
Sandisk Technologies LLC
0 cites
US118622602024
Audit Techniques for Read Disturb Detection in an Open Memory Block
SANDISK TECHNOLOGIES LLC
0 cites
US118480592023
Techniques for Erasing the Memory Cells of Edge Word Lines
Sandisk Technologies LLC
0 cites
US118372922023
String or Block or Die Level Dependent Source Line Voltage for Neighbor Drain Side Select Gate Interference Compensation
San Disk Technologies LLC
0 cites