Ji-yin Tsai

8 Patents

• US125882582026

  Stacked Transistor Isolation Features and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US125504182026

  Etch Stop Layer for Removal of Substrate in Stacking Transistors and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US123241902025

  Method and Multi-channel Devices with Anti-punch-through Features

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US122551022025

  Methods of Forming of Inner Spacer Structure Using Semiconductor Material with Variable Germanium Concentration

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US121599252024

  Semiconductor Device and Method

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US120683952024

  Method for Forming an Undoped Region Under a Source/drain

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US118627092024

  Inner Spacer Structure and Methods of Forming Such

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US116161332023

  Fin Field-effect Transistor Device and Method

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites