12 Patents
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- US124531532025Work-function Layers in the Gates of Pfets
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124263212025Transistor Gate Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123494102025Nanostructure Field-effect Transistor (NANO-FET) with Gates Including a Seam in P-type Work Function Metal Between Nanostructures and Methods of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122836092025Gate Structure of Transistor Including a Plurality of Work Function Layers and Oxygen Device and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121702802024Method of Manufacturing Gate Structure and Method of Manufacturing Fin-field Effect Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121321122024Work Function Control in Gate Structures
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120517212024Methods of Forming Semiconductor Devices Including Gate Barrier Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120092642024Adjusting Work Function Through Adjusting Deposition Temperature
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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- US118550832023Gate Structure, Fin Field-effect Transistor, and Method of Manufacturing Fin-field Effect Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites