25 Patents
- US126108042026Contact Structure, Semiconductor Device Comprising the Same, and Method for Fabricating the Same
NANYA TECHNOLOGY CORPORATION
0 cites - US125074022025Memory with a Contact Between a Data Storage Device and a Data Processing Device
NANYA TECHNOLOGY CORPORATION
0 cites - US124842842025Buried Gate Semiconductor Device with Reduced Gate Induced Drain Leakage
NANYA TECHNOLOGY CORPORATION
0 cites - US124777802025Semiconductor Structure Including Multiple Gate Electrodes
NANYA TECHNOLOGY CORPORATION
0 cites - 0 cites
- US124577302025Method for Manufacturing Semiconductor Device Having Buried Gate Structure
NANYA TECHNOLOGY CORPORATION
0 cites - 0 cites
- US124263392025Buried Gate Semiconductor Device Having a Dielectric Layer Between Two Electrodes
NANYA TECHNOLOGY CORPORATION
0 cites - US124142922025Method for Manufacturing Memory Device Having Word Line with Dual Conductive Materials
NANYA TECHNOLOGY CORPORATION
0 cites - US123425712025Method for Manufacturing Semiconductor Device with Passing Gate
NANYA TECHNOLOGY CORPORATION
0 cites - US123288682025Memory Structure Including Low Dielectric Constant Capping Layer
NANYA TECHNOLOGY CORPORATION
0 cites - US123175712025Semiconductor Device and Method for Manufacturing the Same
NANYA TECHNOLOGY CORPORATION
0 cites - 0 cites
- 0 cites
- 0 cites
- 0 cites
- US120094242024Semiconductor Device, and Method for Manufacturing the Same
NANYA TECHNOLOGY CORPORATION
0 cites - 0 cites
- US119787852024Method of Manufacturing Semiconductor Structure Having a Fin Feature
NANYA TECHNOLOGY CORPORATION
0 cites - US118944272024Semiconductor Device, and Method for Manufacturing the Same
NANYA TECHNOLOGY CORPORATION
0 cites - 0 cites
- US117217592023Method for Forming Gate Metal Structure Having Portions with Different Heights
NANYA TECHNOLOGY CORPORATION
0 cites - US116597042023Method for Manufacturing Semiconductor Structure with Vertical Gate Transistor
NANYA TECHNOLOGY CORPORATION
0 cites - 0 cites
- 0 cites