Jet-rung Chang

3 Patents

• US125882582026

  Stacked Transistor Isolation Features and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US125504182026

  Etch Stop Layer for Removal of Substrate in Stacking Transistors and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US117570182023

  Formation Method of Semiconductor Device with Gate All Around Structure

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites