Jeoung Mo Koo

9 Patents

• US125507252026

  Structure for Galvanic Isolation Using Dielectric-filled Trench in Substrate Below Electrode

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US125385512026

  Semiconductor Structures for Galvanic Isolation

  GLOBALFOUNDRIES Singapore Pte. Ltd.

  0 cites
• US123362202025

  Extended-drain Metal-oxide-semiconductor Devices with a Gap Between the Drain and Body Wells

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US121763952024

  Structures for a Laterally-diffused Metal-oxide-semiconductor Transistor

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US119555142024

  Field-effect Transistors with a Gate Structure in a Dual-depth Trench Isolation Structure

  Globalfoundries U.S. Inc.

  0 cites
• US118626932024

  Semiconductor Devices Including a Drain Captive Structure Having an Air Gap and Methods of Forming the Same

  GLOBALFOUNDRIES Singapore Pte. Ltd.

  0 cites
• US117913792023

  Galvanic Isolation Using Isolation Break Between Redistribution Layer Electrodes

  GLOBALFOUNDRIES SINGAPORE PTE Ltd

  0 cites
• US117913922023

  Extended-drain Metal-oxide-semiconductor Devices with a Notched Gate Electrode

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US117642732023

  Semiconductor Structures for Galvanic Isolation

  GLOBALFOUNDRIES SINGAPORE PTE. Ltd.

  0 cites