10 Patents
- US125934402026Semiconductor Device Including Single Crystal Semiconductor Pattern with Complementary Structure
SAMSUNG ELECTRONICS CO., Ltd.
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- US122179582025Method of Pre-treating Substrate and Method of Directly Forming Graphene Using the Same
Samsung Electronics Co., Ltd.
0 cites - US121990152025Semiconductor Device Including via Structure and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US121836602024Semiconductor Device Including Through-silicon via and Method of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US121780342024Semiconductor Device Including Buried Contact and Method for Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121598592024Thermal Pad, Semiconductor Chip Including the Same and Method of Manufacturing the Semiconductor Chip
Samsung Electronics Co., Ltd.
0 cites - US118442072023Semiconductor Device Including Buried Contact and Method for Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites