12 Patents
- US126044932026Device Over Patterned Buried Porous Layer of Semiconductor Material
GLOBALFOUNDRIES U.S. Inc.
0 cites - US124190982025Device Integration Schemes Leveraging a Bulk Semiconductor Substrate Having a <111> Crystal Orientation
Globalfoundries U.S. Inc.
0 cites - US121193832024Transistor with Multi-level Self-aligned Gate and Source/drain Terminals and Methods
Globalfoundries U.S. Inc.
0 cites - US120877642024Device Integration Schemes Leveraging a Bulk Semiconductor Substrate Having a <111> Crystal Orientation
Globalfoundries U.S. Inc.
0 cites - US120625742024Integrated Circuit Structure with Through-metal Through-substrate Interconnect and Method
Globalfoundries U.S. Inc.
0 cites - US120028782024Implanted Isolation for Device Integration on a Common Substrate
Globalfoundries U.S. Inc.
0 cites - US119161192024Transistor with Self-aligned Gate and Self-aligned Source/drain Terminal(s) and Methods
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US117106552023Integrated Circuit Structure with Semiconductor-based Isolation Structure and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites - US116463512023Transistor with Multi-level Self-aligned Gate and Source/drain Terminals and Methods
Globalfoundries U.S. Inc.
0 cites - US116161272023Symmetric Arrangement of Field Plates in Semiconductor Devices
Globalfoundries U.S. Inc.
0 cites - US115693742023Implanted Isolation for Device Integration on a Common Substrate
Globalfoundries U.S. Inc.
0 cites