12 Patents
- US125884892026Integrated Circuit Devices Including Stacked Elements and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US124648032025Multi-fin Vertical Field Effect Transistor and Single-fin Vertical Field Effect Transistor on a Single Integrated Circuit Chip
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US123566652025Stacked Transistors Having an Isolation Region Therebetween and a Common Gate Electrode, and Related Fabrication Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123100622025Integrated Circuit Devices Including Stacked Transistors and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122625602025Integrated Circuit Devices Including Transistor Stacks Having Different Threshold Voltages and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US121425642024Backside Power Distribution Network Semiconductor Package and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119233652024Integrated Circuit Devices Including Transistor Stacks Having Different Threshold Voltages and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119012402024Multi-fin Vertical Field Effect Transistor and Single-fin Vertical Field Effect Transistor on a Single Integrated Circuit Chip
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117697282023Backside Power Distribution Network Semiconductor Package and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115576562023Semiconductor Device Having a Capping Pattern on a Gate Electrode
SAMSUNG ELECTRONICS CO., Ltd.
0 cites