23 Patents
- US125139192025Method of Manufacturing Metal Nitride Film and Electronic Device Including Metal Nitride Film
Samsung Electronics Co., Ltd.
0 cites - US124777572025Capacitor, Semiconductor Device Comprising the Capacitor, and Method of Fabricating the Capacitor
Samsung Electronics Co., Ltd.
0 cites - US124143132025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124083532025Device with Dielectric Metal Oxide Layers and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123566402025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US123241452025Semiconductor Device with Capping Conductive Layer on an Electrode and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122760262025Thin Film Structure Including Dielectric Material Layer, Method of Manufacturing the Same, and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US120716902024Thin Film Structure Including Dielectric Material Layer, and Method of Manufacturing the Same, and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US120683602024Capacitor, Semiconductor Device Including the Same, and Method of Fabricating Capacitor
Samsung Electronics Co., Ltd.
0 cites - US120517172024Anti-ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd
0 cites - US120340362024Semiconductor Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US119787612024Capacitor, Semiconductor Device Including the Same, and Method of Fabricating Capacitor
Samsung Electronics Co., Ltd.
0 cites - US119359162024Dielectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118699262024High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device, and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118109462023Integrated Circuit Device Including Capacitor with Metal Nitrate Interfacial Layer
Samsung Electronics Co., Ltd.
0 cites - US117989802023Integrated Circuit Device and Electronic Device Including Capacitor with Interfacial Layer Containing Metal Element, Other Element, Nitrogen, and Oxygen
Samsung Electronics Co., Ltd.
0 cites - US117610892023Thin Film Structure Including Dielectric Material Layer, Method of Manufacturing the Same, and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US117281602023Method of Forming Oxide Film Including Two Non-oxygen Elements, Method of Manufacturing Semiconductor Device, Method of Forming Dielectric Film, and Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US116658842023Semiconductor Device with Capping Conductive Layer on an Electrode and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116580242023Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co.. Ltd.
0 cites - US115945922023Capacitor, Semiconductor Device Including the Same, and Method of Fabricating Capacitor
Samsung Electronics Co., Ltd.
0 cites - US115693412023Dielectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites